document number: 89139 for technical questions within your region, please contact one of the following: www.vishay.com revision: 25-aug-09 pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com 1 surface mount trench mos barrier schottky rectifier vssb310 vishay general semiconductor new product features ? low profile package ? ideal for automated placement ? trench mos schottky technology ? low power losses, high efficiency ? low forward voltage drop ? meets msl level 1, per j-st d-020, lf maximum peak of 260 c ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec typical applications for use in low voltage, high frequency inverters, freewheeling, dc-to-dc conver ters, and polarity protection applications. mechanical data case: do-214aa (smb) molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs compliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 e3 suffix meets jesd 2 01 class 1a whisker test polarity: color band denotes the cathode end notes (1) mounted on 10 mm x 10 mm pad areas, 1 oz. fr4 p.c.b. (2) free air, mounted on recommended copper pad area primary characteristics i f(av) 3.0 a v rrm 100 v i fsm 80 a e as 50 mj v f at i f = 3.0 a 0.56 v t j max. 150 c do-214aa (smb) tmbs ? maximum ratings (t a = 25 c unless otherwise noted) parameter symbol vssb310 unit device marking code v3b maximum repetitive peak reverse voltage v rrm 100 v maximum dc forward current i f (1) 3.0 a i f (2) 1.9 peak forward surge current 10 ms single half sine-wave superimposed on rated load i fsm 80 a non-repetitive avalanche energy at t j = 25 c, l = 60 mh e as 50 mj peak repetitive reverse current at t p = 2 s, 1 khz, t j = 38 c 2 c i rrm 1.0 a operating junction and storage temperature range t j , t stg - 40 to + 150 c
www.vishay.com for technical questions wi thin your region, please contact one of the following: document number: 89139 2 pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com revision: 25-aug-09 vssb310 vishay general semiconductor new product notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width 40 ms notes (1) free air, mounted on recommended p.c.b. 1 oz. pad area. thermal resistance r ja - junction to ambient (2) units mounted on p.c.b. with 10 mm x 10 mm copper pad areas. r jm - junction to mount ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curv e fig. 2 - forward power loss characteristics electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit breakdown voltage i r = 1.0 ma t a = 25 c v br 100 (minimum) - v instantaneous forward voltage i f = 3.0 a t a = 25 c v f (1) 0.62 0.70 v t a = 125 c 0.56 0.65 reverse current v r = 70 v t a = 25 c i r (2) 1.5 - a t a = 125 c 1.2 - ma v r = 100 v t a = 25 c 7.0 250 a t a = 125 c 3.6 20 ma typical junction capacitance 4.0 v, 1 mhz c j 230 - pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol vssb310 unit typical thermal resistance r ja (1) 120 c/w r jm (2) 15 ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode vssb310-e3/52t 0.096 52t 750 7" diameter plastic tape and reel vssb310-e3/5bt 0.096 5bt 3200 13" diameter plastic tape and reel 0 25 50 75 100 125 4.0 150 t m - mo u nt temperat u re (c) a v erage for w ard re ctified c u rr ent (a ) 2.5 2.0 1.5 0.5 0 1.0 t m meas u red at terminal 3.0 3.5 0 3.6 0 2.4 a v erage for w ard c u rrent (a) a v erage po w er loss ( w ) 1.4 1.2 1.0 0. 8 0.6 0.4 0.2 3.2 2. 8 2.4 2.0 1.6 1.2 0. 8 0.4 d = t p /t t p t d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0. 8 d = 1.0 2.2 2.0 1. 8 1.6
document number: 89139 for technical questions within your region, please contact one of the following: www.vishay.com revision: 25-aug-09 pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com 3 vssb310 vishay general semiconductor new product fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse characteristics fig. 5 - typical junction capacitance fig. 6 - typical transient thermal impedance package outline dimensions in inches (millimeters) 1 100 0 0.1 instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) t a = 125 c t a = 25 c t a = 100 c t a = 150 c 10 0.2 0.4 0.6 0. 8 1.0 1.2 1.6 1.4 10 20 40 60 0.0001 0.001 0.01 0.1 1 100 8 0 100 percent of rated peak re v erse v oltage ( % ) t a = 125 c t a = 25 c t a = 100 c t a = 150 c 30 50 70 90 instantaneo u s re v erse c u rrent (ma) 10 100 10 10 100 1000 0.1 1 re v erse v oltage ( v ) j u nction capacitance (pf) t j = 25 c f = 1.0 mhz v sig = 50 m v p-p 100 10 1 100 1000 0.01 1 t - p u lse d u ration (s) transient thermal impedance (c/ w ) 10 0.1 j u nction to am b ient 0.012 (0.305) 0.006 (0.152) 0.00 8 (0.2) 0.1 8 0 (4.57) 0.160 (4.06) 0.155 (3.94) 0.130 (3.30) 0.0 8 6 (2.20) 0.077 (1.95) 0.220 (5.59) 0.205 (5.21) 0.060 (1.52) 0.030 (0.76) 0.096 (2.44) 0.0 8 4 (2.13) do-214aa (smb) 0 (0) cathode band 0.0 8 5 (2.159) max. 0.220 ref. 0.0 8 6 (2.1 8 ) mi n . 0.060 (1.52) mi n . mountin g pad layout
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